r 201510f 1/11 n ??? n- channel mosfet jcs19n20 order codes ? marking ? package halogen free ? packaging device weight jcs19n20c-o-c-n-b jcs19n20c to-220c no tube 2.06 g(typ) jcs19n20f-o-f-n- b jcs19n20f to-220mf no tube 2.22 g(typ) ? main characteristics id 18.0a vdss 200 v rdson-max @vgs=10v 0.18 qg-typ 47nc ? ? ??? ? ? ups ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? ups ? ? ? ? c rss ( ? 48pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? low gate charge ? low c rss (typical 48pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs product ? order message ? package
r jcs19n20 201510f 2/10 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? value ? parameter symbol jcs19n20c jcs19n20f unit ???? drain-source voltage v dss 200 v 18.0 18.0* a ? drain current -continuous i d t=25 t=100 11.4 11.4* a ?? 1 drain current -pulse note 1 i dm 72 72* a ??? gate-source voltage v gss 30 v ?? 2 single pulsed avalanche energy note 2 e as 421 mj ?? 1 avalanche current note 1 i ar 18 a ??? 1 repetitive avalanche current note 1 e ar 14 4.4 mj ????? 3 peak diode recovery dv/dt note 3 dv/dt 5.5 v/ns 140 44 w ? power dissipation p d t c =25 -derate above 25 1.12 0.35 w/ ??? operating and storage temperature range t j t stg -55 +150 ?? maximum lead temperature for soldering purposes t l 300
r jcs19n20 201510f 3/10 electrical characteristic ? parameter symbol tests conditions min typ max units ? off Ccharacteristics ??? drain-source voltage bv dss i d =250a, v gs =0v 200 - - v ?? breakdown voltage temperature coefficient bv dss /t j i d =250a, referenced to 25 - 0.2 - v/ v ds =200v, v gs =0v, t c =25 - - 1 a ???? zero gate voltage drain current i dss v ds =160v, t c =125 - - 10 a ?? gate-body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate-body leakage current, reverse i gssr v ds =0v, v gs =-30v - - -100 na ?? on-characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250a 2.0 - 4.0 v ?? static drain-source on-resistance r ds(on) v gs =10v , i d =9.0a - 0.15 0.18 ? forward transconductance g fs v ds = 40v , i d =9.0a note 4 - 13.5 - s ? dynamic characteristics input capacitance c iss - 1330 1760 pf output capacitance c oss - 181 245 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 48 65 pf
r jcs19n20 201510f 4/10 electrical characteristics thermal characteristic ? value ? parameter symbol jcs19n20c jcs19n20f unit ??? thermal resistance, junction to case rth(j-c) 0.89 2.85 /w ? thermal resistance, junction to ambient rth(j-a) 62.5 /w ? parameter symbol tests conditions min typ max units switching Ccharacteristics ?? turn-on delay time t d (on) - 54 70 ns ? turn-on rise time t r - 104 162 ns ?? turn-off delay time t d (off) - 327 395 ns ?? turn-off fall time t f v dd =100v,i d =18a,r g =25? v gs =10v note 4 5 - 107 145 ns ? total gate charge q g - 47 62 nc ?? gate-source charge q gs - 8 - nc ?? gate-drain charge q gd v ds =160v , i d =18a v gs =10v note 4 5 - 22 - nc ????? drain-source diode characteristics and maximum ratings maximum continuous drain-source diode forward current i s - - 18 a maximum pulsed drain-source diode forward current i sm - - 72 a maximum continuous drain-source diode forward current v sd v gs =0v, i s =18a - 1.48 v ?? reverse recovery time t rr 195 ns ? reverse recovery charge q rr v gs =0v, i s =18a di f /dt=100a/s (note 4) 1.48 c ? 1 ? 2 l=2.6mh, i as =18a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 18a,di/dt 300a/s, vddbv dss , ? t j =25 4 ? 300s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l=2.6mh, i as =18a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 18a,di/dt 300a/s, vddbv dss , starting t j =25 4 pulse test pulse width 300s, duty cycle2 5 essentially independent of operating temperature
r jcs19n20 201510f 5/10 electrical characteristics (curves) 10 0 10 1 0.0 5.0x10 2 1.0x10 3 1.5x10 3 2.0x10 3 c rss c oss c iss c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v d s drain-source voltage [v] 0 2 4 6 8 10 12 0 10 20 30 40 50 notes: i d =18a v ds =40v v ds =100v v ds =160v q g toltal gate charge [nc] v gs gate source voltage[v] capacitance characteristics gate charge characteristics
r jcs19n20 201510f 6/10 electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes: 1. v g s =0v 2. i d =250a bv ds (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1. v gs =10v 2. i d =9a r d ( on ) (normalized) t j [ ] 25 50 75 100 125 150 0 4 8 12 16 20 i d drain current [a] t c case temperature [ ] breakdown voltage variation vs. temperature on-resistance variation vs. temperature maximum safe operating area for jcs19n20c maximum safe operating area for jcs19n20f maximum drain current vs. case temperature
r jcs19n20 201510f 7/10 electrical characteristics (curves) 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 0 . 0 1 0 . 1 1 t 2 t 1 d = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 z jc (t) thermal response t 1 s q u a r e w a v e p u l s e d u r a t i o n [ s e c ] s i n g l e p u l s e 0 . 0 1 n o t e s : 1 z j c ( t ) = 0 . 8 9 / w m a x 2 d u t y f a c t o r , d = t 1 / t 2 3 t j m - t c = p d m * z j c ( t ) p d m 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 0 . 0 1 0 . 1 1 1 0 t 2 t 1 d = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 z jc (t) thermal response t 1 s q u a r e w a v e p u l s e d u r a t i o n [ s e c ] s i n g l e p u l s e 0 . 0 1 n o t e s : 1 z j c ( t ) = 2 . 8 5 / w m a x 2 d u t y f a c t o r , d = t 1 / t 2 3 t j m - t c = p d m * z j c ( t ) p d m transient thermal response curve for jcs19n20c transient thermal response curve for jcs19n20f
r jcs19n20 201510f 8/10 ? package mechanical data to-220c unit mm
r jcs19n20 201510f 9/10 ? package mechanical data to-220mf unit mm
r jcs19n20 201510f 10/10 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? htu www.hwdz.com.cn uth ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86-432-64678411 fax 86-432-64665812 web site htu www.hwdz.com.cn uth market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411 fax: 86-432-64671533
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